The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2017

Filed:

Aug. 22, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Young-Soo Sohn, Seoul, KR;

Chul-Woo Park, Yongin-si, KR;

Kwang-Il Park, Yongin-si, KR;

Hak-Soo Yu, Seongnam-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/10 (2016.01); G11C 14/00 (2006.01); G11C 29/00 (2006.01); G11C 11/40 (2006.01); G11C 29/44 (2006.01);
U.S. Cl.
CPC ...
G11C 14/0018 (2013.01); G11C 29/702 (2013.01); G11C 29/785 (2013.01); G11C 11/40 (2013.01); G11C 2029/4402 (2013.01);
Abstract

A semiconductor memory device may include a cell array comprising a plurality of memory cells, each memory cell connected to a word line and a bit line, the cell array divided into a plurality of blocks, each block including a plurality of word lines, the plurality of blocks including at least a first defective block; a nonvolatile storage circuit configured to store address information of the first defective block, and to output the address information to an external device; and a fuse circuit configured to cut off an activation of word lines of the first defective block.


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