The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2017

Filed:

Dec. 27, 2016
Applicant:

Jx Nippon Mining & Metals Corporation, Tokyo, JP;

Inventors:

Masaomi Murakami, Ibaraki, JP;

Makoto Mikami, Ibaraki, JP;

Kouji Murakami, Ibaraki, JP;

Akira Noda, Ibaraki, JP;

Toru Imori, Ibaraki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01T 1/24 (2006.01); H01L 23/00 (2006.01); H01L 27/144 (2006.01); H01L 27/146 (2006.01); H01L 31/08 (2006.01); H01L 31/02 (2006.01); H01L 31/0224 (2006.01); H01L 31/115 (2006.01); H01L 31/0296 (2006.01);
U.S. Cl.
CPC ...
G01T 1/24 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/09 (2013.01); H01L 27/144 (2013.01); H01L 27/146 (2013.01); H01L 31/02005 (2013.01); H01L 31/022408 (2013.01); H01L 31/08 (2013.01); H01L 31/115 (2013.01); H01L 31/0296 (2013.01); H01L 31/02966 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0558 (2013.01); H01L 2224/05583 (2013.01); H01L 2224/05584 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05664 (2013.01);
Abstract

The present invention provides a radiation detector UBM electrode structure body and a radiation detector which suppress the degradation of metal electrode layers at the time of formation of UBM layers and achieve sufficient electric characteristics, and a method of manufacturing the same. A radiation detector UBM electrode structure body according to the present invention includes a substrate made of CdTe or CdZnTe, comprising a Pt or Au electrode layer formed on the substrate by electroless plating, an Ni layer formed on the Pt or Au electrode layer by sputtering, and an Au layer formed on the Ni layer by sputtering.


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