The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2017

Filed:

Dec. 03, 2015
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Zhiyong Zhan, Milpitas, CA (US);

Qingfei Chen, Santa Clara, CA (US);

Chin-Chang Pai, Mountain View, CA (US);

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/357 (2011.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H04N 5/357 (2013.01); H04N 5/3745 (2013.01);
Abstract

A pixel circuit includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed into the photodiode, and a transfer transistor coupled to the photodiode. The circuit also includes a noise correction circuit coupled to receive a transfer control signal and the noise correction circuit is coupled to selectively enable or disable the transfer transistor from receiving the transfer control signal. A storage transistor is coupled to the transfer transistor, and the transfer transistor is coupled to selectively transfer the image charge accumulated in the photodiode to the storage transistor for storage in response to the transfer control signal if the transfer transistor is enabled to receive the transfer control signal.


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