The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
Jan. 29, 2016
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Ayahito Uetake, Atsugi, JP;
Manabu Matsuda, Atsugi, JP;
FUJITSU LIMITED, Kawasaki, JP;
Abstract
A semiconductor laser in a ridge waveguide structure includes: a semiconductor substrate; a lower cladding layer which is formed on the semiconductor substrate; an active layer and a semiconductor layer which are in parallel on the lower cladding layer and are connected with each other; a first upper cladding layer locally aligned above the active layer; a second upper cladding layer locally aligned above the semiconductor layer; and a third upper cladding layer locally aligned above the active layer to confine light which is guided in the active layer, wherein the semiconductor layer has a band gap which is larger than that of the active layer. According to this constitution, an optical semiconductor device with high reliability in which the ridge waveguide structure whose manufacturing is relatively easy is applied, and current diffusion and electrical crosstalk between lasers in the ridge waveguide structure are suppressed is enabled.