The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
Jan. 23, 2014
Ushio Denki Kabushiki Kaisha, Tokyo, JP;
Kohei Miyoshi, Himeji, JP;
Masashi Tsukihara, Himeji, JP;
Ushio Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Provided is an LED element that ensures horizontal current spreading within an active layer, improving light-emission efficiency, without causing problems due to lattice mismatch in an n-type semiconductor layer adjacent to the active layer. This LED element is obtained by inducing c-axis growth of nitride semiconductor layers on a support substrate, and comprises a first semiconductor layer constituted of an n-type nitride semiconductor, a current-diffusion layer, an active layer constituted of a nitride semiconductor, and a second semiconductor layer constituted of a p-type nitride semiconductor. The current-diffusion has a hetero-structure having a third semiconductor layer constituted of InGaN (0<x≦0.05) and a fourth semiconductor layer constituted of n-AlGaInN (0<y1<1, 0<y2<1, 0≦y3≦0.05, y1+y2+y3=1), the third semiconductor layer having a thickness of 10 nm or more and 25 nm or less.