The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2017

Filed:

Jul. 20, 2016
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventor:

Hyun Ho Lee, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01); H01L 27/24 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 27/2454 (2013.01); H01L 29/1037 (2013.01); H01L 29/42356 (2013.01);
Abstract

Disclosed is a semiconductor device, including: a first pipe gate; a second pipe gate on the first pipe gate; a stacked structure on the second pipe gate; a first channel layer including a first pipe channel layer positioned within the first pipe gate and first cell channel layers connected to the first pipe channel layer; a second channel layer including a second pipe channel layer positioned within the second pipe gate, and second cell channel layers connected to the second pipe channel layer; and a slit insulating layer passing through the stacked structure and positioned between the adjacent second cell channel layers, wherein the second pipe channel layer has a body portion and a protrusion portion extending below the body portion at a position below the slit insulating layer.


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