The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
Aug. 12, 2016
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Hisashi Saito, Yokohama, JP;
Masahiko Kuraguchi, Yokohama, JP;
Tatsuo Shimizu, Shinagawa, JP;
Shintaro Nakano, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
A semiconductor device according to an embodiment includes a first nitride semiconductor layer; a source electrode provided on the first nitride semiconductor layer; a drain electrode provided on the first nitride semiconductor layer; a gate electrode provided between the source electrode and the drain electrode; a first film provided between the source electrode and the gate electrode and between the gate electrode and the drain electrode; and a second film provided on the first film. The first film is provided on the first nitride semiconductor layer. The first film has a lower hydrogen diffusion coefficient than a hydrogen diffusion coefficient of a silicon oxide film.