The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
May. 03, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Dong-Kwon Kim, Gimcheon-si, KR;
Yong-Woo Lee, Anyang-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A method of fabricating a semiconductor device is provided as follows. A channel layer is formed on a strain relaxed buffer (SRB) layer. A first etching process is performed on the channel layer and the SRB layer to form a plurality of trenches. The trenches penetrate through the channel layer and into the SRB layer to a first depth. First liners are formed on first sidewalls of the trenches having the first depth. The first liners cover the first sidewalls. A second etching process is performed on the SRB layer exposed through the trenches. The second etching process is performed on the SRB layer using a gas etchant having etch selectivity with respect to the first liners so that after the performing of the second etching process, the first liners remain on the first sidewalls.