The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2017

Filed:

Dec. 14, 2015
Applicants:

Moon Seung Yang, Hwaseong-si, KR;

Eun Hye Choi, Suwon-si, KR;

Sun Jung Kim, Suwon-si, KR;

Seung Hun Lee, Hwaseong-si, KR;

Hyun-jung Lee, Suwon-si, KR;

Inventors:

Moon Seung Yang, Hwaseong-si, KR;

Eun Hye Choi, Suwon-si, KR;

Sun Jung Kim, Suwon-si, KR;

Seung Hun Lee, Hwaseong-si, KR;

Hyun-Jung Lee, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/161 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1054 (2013.01); H01L 21/0245 (2013.01); H01L 21/0251 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02505 (2013.01); H01L 21/02532 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 29/161 (2013.01);
Abstract

A semiconductor substrate and a semiconductor device are provided. The semiconductor substrate includes a base substrate, a first silicon germanium layer on the base substrate and a second silicon germanium layer on the first silicon germanium layer. A germanium fraction of the second silicon germanium layer decreases in the direction away from the base substrate, and a germanium fraction of a lowermost part of the second silicon germanium layer is greater than a germanium fraction of an uppermost part of the first silicon germanium layer.


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