The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2017

Filed:

Apr. 19, 2013
Applicant:

Robert Bosch Gmbh, Stuttgart, DE;

Inventors:

Ingo Herrmann, Friolzheim, DE;

Edda Sommer, Stuttgart, DE;

Christoph Schelling, Stuttgart, DE;

Christian Rettig, Reutlingen, DE;

Mirko Hattass, Stuttgart, DE;

Assignee:

Robert Bosch GmbH, Stuttgart, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G01J 5/20 (2006.01); H01L 31/028 (2006.01); G01J 5/00 (2006.01); G01J 5/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14649 (2013.01); G01J 5/20 (2013.01); H01L 27/1467 (2013.01); H01L 27/14609 (2013.01); H01L 27/14629 (2013.01); H01L 27/14636 (2013.01); H01L 27/14685 (2013.01); H01L 31/028 (2013.01); G01J 2005/0048 (2013.01); G01J 2005/067 (2013.01);
Abstract

An infrared sensor device includes a semiconductor substrate, at least one sensor element that is micromechanically formed in the semiconductor substrate, and at least one calibration element, which is micromechanically formed in the semiconductor substrate, for the sensor element. An absorber material is arranged on the semiconductor substrate in the area of the sensor element and the calibration element. One cavern each is formed in the semiconductor substrate substantially below the sensor element and substantially below the calibration element. The sensor element and the calibration element are thermally and electrically isolated from the rest of the semiconductor substrate by the caverns. The infrared sensor device has high sensitivity, calibration functionality for the sensor element, and a high signal-to-noise ratio.


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