The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
Mar. 15, 2016
Seiko Epson Corporation, Tokyo, JP;
Kazunobu Kuwazawa, Sakata, JP;
Noriyuki Nakamura, Sakata, JP;
Mitsuo Sekisawa, Sakata, JP;
Takehiro Endo, Sakata, JP;
SEIKO EPSON CORPORATION, Tokyo, JP;
Abstract
A solid-state imaging device includes a P-well, a gate insulating film, a gate electrode, a P-type pinning layer that is located in the P-well so as to be outside the gate electrode and start from a first end portion of the gate electrode, a P-type impurity region that is located in the P-well so as to extend under the gate electrode from a first end portion side and be in contact with the pinning layer, an N-type impurity region that is located in the P-well so as to extend under the pinning layer and the P-type impurity region and be in contact with the P-type impurity region and the gate insulating film, and an N-type impurity region that is located in the P-well and includes a portion that is under a second end portion of the gate electrode.