The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
Feb. 23, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Sung-Dae Suk, Seoul, KR;
Kang-Ill Seo, Chungcheongbuk-Do, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A semiconductor device is provided. A substrate includes a first region and a second region. A first wire pattern, extending in a first direction, is formed at a first height from the substrate of the first region. A second wire pattern, extending in a second direction, is formed at a second height from the substrate of the second region. The first height is different from the second height. A first gate electrode, surrounding the first wire pattern, extends in a third direction crossing the first direction. A second gate electrode, surrounding the second wire pattern, extends in a fourth direction crossing the second direction. A first gate insulation layer is formed along a circumference of the first wire pattern and a sidewall of the first gate electrode. A second gate insulation layer is formed along a circumference of the second wire pattern and a sidewall of the second gate electrode.