The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2017

Filed:

Jul. 06, 2015
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventor:

Hyun Ho Lee, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 27/02 (2006.01); H01L 21/768 (2006.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); H01L 27/11582 (2013.01); H01L 27/11556 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device may include stacks including conductive layers and insulating layers. The conductive layers and insulating layers may be alternately stacked. The semiconductor device may include semiconductor patterns passing through the stacks. The semiconductor device may include plug patterns located on the semiconductor patterns and protruding compared to the stacks. The semiconductor device may include insulating patterns located on the stacks and the plug patterns and each including an edge area having a height at a level lower than a central area. The semiconductor device may include slit insulating layers located between the stacks and between the insulating patterns.


Find Patent Forward Citations

Loading…