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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9818696 B1

PDFFull Text
Date of Patent:
Nov. 14, 2017

Filed:

Dec. 26, 2016

Semiconductor device

Applicant:

Sanken Electric Co., Ltd., Niiza-shi, Saitama, JP;

Inventors:

Shunsuke Fukunaga, Niiza, JP;

Taro Kondo, Niiza, JP;

Shinji Kudo, Niiza, JP;

Assignee:

Sanken Electric Co., LTD., Niiza-shi, Saitama, JP;

Attorney:

Banner & Witcoff, Ltd.

Primary Examiner:

Luan C Thai

Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 29/78 (2006.01); H01L 29/739 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/417 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53271 (2013.01); H01L 23/5226 (2013.01); H01L 23/53209 (2013.01); H01L 23/53266 (2013.01); H01L 29/407 (2013.01); H01L 29/41741 (2013.01); H01L 29/4236 (2013.01); H01L 29/45 (2013.01); H01L 29/7397 (2013.01); H01L 29/7827 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/452 (2013.01);
Abstract

A semiconductor device includes: a trench; a first electrode is formed in the trench; a first impurity region, which has a first conductivity type and is formed to abut on the trench; a second impurity region, which has a second conductivity type and is formed to abut the trench; an insulating film, which is formed on the front surface of the semiconductor substrate; a conductive plug, which is formed to penetrate through the insulating film and is electrically connected to the first impurity region and the second impurity region; wherein the conductive plug includes: a silicon layer made of silicon other than a single crystal; a silicide crystallite contained in the silicon layer; and a blocking layer that is formed to cover sides of the silicon layer and is made of a material that is impervious to the silicide crystallites.

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