The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2017

Filed:

Mar. 10, 2016
Applicant:

Sii Semiconductor Corporation, Chiba-shi, Chiba, JP;

Inventors:

Yukihiro Imura, Chiba, JP;

Yoshitaka Kimura, Chiba, JP;

Masaru Akino, Chiba, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/82 (2006.01); H01L 23/52 (2006.01); H01L 27/04 (2006.01); H01L 21/822 (2006.01); H01L 23/525 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5258 (2013.01); H01L 23/564 (2013.01);
Abstract

A corrosion resistant semiconductor device includes fuse elements that can be cut by laser light. An upper portion of the fuse elements is covered with a porous insulating film so that, when laser light irradiated from a rear surface of a semiconductor substrate is collected at selected fuse elements, the fuse elements generate heat, expand, and rupture. A metal lattice having a plurality of windows is disposed over the fuse elements to permit rapid expansion of the fuse elements when irradiated with the laser light. Alternatively, a metal array having a plurality of independent light-shielding portions may be disposed over the fuse elements to prevent the laser light from adversely affecting circuitry on the front surface side of the semiconductor device.


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