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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9818657 B1

PDFFull Text
Date of Patent:
Nov. 14, 2017

Filed:

Jun. 21, 2013

Dry etching method and method of manufacturing semiconductor device

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Keiji Okamoto, Tokyo, JP;

Kazuyuki Ozeki, Tokyo, JP;

Hiromasa Arai, Tokyo, JP;

Assignee:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Stephanie Duclair

Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); B44C 1/22 (2006.01); H01L 21/66 (2006.01); H01L 29/49 (2006.01); H01L 27/12 (2006.01); H01L 21/3213 (2006.01); H01L 27/11573 (2017.01); H01L 29/423 (2006.01); H01L 27/11 (2006.01); H01L 29/43 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); H01L 21/32136 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01); H01L 22/20 (2013.01); H01L 27/11573 (2013.01); H01L 27/12 (2013.01); H01L 29/42328 (2013.01); H01L 29/49 (2013.01); H01L 22/12 (2013.01); H01L 27/1104 (2013.01); H01L 29/435 (2013.01);
Abstract

A first etching rate of the first conductive film is calculated by acquiring correlation between an opening ratio of an etching mask and an etching rate of an etching target film, and then, performing a first dry etching to a first conductive film formed on a first wafer. Next, a second etching mask is formed on a second conductive film formed on a second wafer, and an etching time of the second conductive film is determined from the correlation between the opening ratio and the etching rate, the first etching rate, and a film thickness of the second conductive film when the second conductive film is subjected to a second dry etching in time-controlled etching.

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