The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9818641 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 14, 2017

Filed:

Sep. 21, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Guillaume Bouche, Albany, NY (US);

Jason Eugene Stephens, Menands, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 23/528 (2006.01); H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 21/31144 (2013.01); H01L 21/76897 (2013.01); H01L 23/528 (2013.01); H01L 27/11 (2013.01);
Abstract

A method includes providing a structure having a first, second and third hardmask layer and a mandrel layer disposed respectively over a dielectric stack. An array of mandrels, a beta trench and a gamma trench are patterned into the structure. First inner spacers are formed on sidewalls of the beta trench and second inner spacers are formed on sidewalls of the gamma trench. The first and second inner spacers form a portion of a pattern. The pattern is etched into the dielectric stack to form an array of mandrel and non-mandrel metal lines extending in a Y direction and being self-aligned in an X direction. The portion of the pattern formed by the first and second inner spacers forms a first pair of cuts in a mandrel line and a second pair of cuts in a non-mandrel line respectively. The cuts are self-aligned in the Y direction.


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