The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2017

Filed:

Sep. 21, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Jason Eugene Stephens, Menands, NY (US);

Guillaume Bouche, Albany, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 27/11 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 21/31144 (2013.01); H01L 21/76897 (2013.01); H01L 23/528 (2013.01); H01L 27/11 (2013.01);
Abstract

A method includes providing a structure having a first hardmask layer, second hardmask layer and mandrel layer disposed respectively over a dielectric stack. An array of mandrels is patterned into the mandrel layer. A gamma trench is patterned into the second hardmask layer and between the mandrels. Self-aligned inner spacers are formed on sidewalls of the gamma trench, the inner spacers forming a portion of a pattern. The pattern is etched into the dielectric stack to form an array of alternating mandrel and non-mandrel metal lines extending in a Y direction and being self-aligned in a perpendicular X direction. The portion of the pattern formed by the inner spacers is utilized to form a pair of non-mandrel line cuts in a non-mandrel line. The non-mandrel line cuts are self-aligned in the Y direction.


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