The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
Aug. 07, 2015
Applicant:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Inventor:
Gweltaz Gaudin, Grenoble, FR;
Assignee:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29C 65/00 (2006.01); H01L 21/18 (2006.01); B32B 37/14 (2006.01); B32B 37/18 (2006.01); B32B 38/18 (2006.01); B32B 41/00 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/185 (2013.01); B32B 37/144 (2013.01); B32B 37/18 (2013.01); B32B 38/1808 (2013.01); B32B 38/1866 (2013.01); B32B 41/00 (2013.01); H01L 21/187 (2013.01); H01L 24/75 (2013.01); H01L 24/80 (2013.01); H01L 24/94 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); B32B 2041/04 (2013.01); B32B 2307/202 (2013.01); B32B 2309/72 (2013.01); B32B 2457/14 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/75702 (2013.01); H01L 2224/75703 (2013.01); H01L 2224/75756 (2013.01); H01L 2224/75901 (2013.01); H01L 2224/80006 (2013.01); H01L 2224/80357 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80948 (2013.01); H01L 2224/94 (2013.01); H01L 2924/3511 (2013.01); Y10T 156/10 (2015.01); Y10T 156/1089 (2015.01); Y10T 156/1092 (2015.01);
Abstract
A method for bonding a first wafer onto a second wafer by molecular adhesion where the wafers have an initial radial misalignment between them. The method includes bringing the two wafers into contact so as to initiate the propagation of a bonding wave between the two wafers while a predefined bonding curvature is imposed on at least one of the two wafers during the contacting step as a function of the initial radial misalignment.