The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
Dec. 19, 2014
Applicant:
Sumco Corporation, Tokyo, JP;
Inventors:
Kazuhisa Torigoe, Tokyo, JP;
Toshiaki Ono, Tokyo, JP;
Assignee:
SUMCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/24 (2006.01); C30B 25/20 (2006.01); H01L 21/324 (2006.01); C30B 25/18 (2006.01); C30B 29/06 (2006.01); C30B 33/02 (2006.01); H01L 29/10 (2006.01); H01L 29/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02694 (2013.01); C23C 16/24 (2013.01); C30B 25/186 (2013.01); C30B 25/20 (2013.01); C30B 29/06 (2013.01); C30B 33/02 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/324 (2013.01); H01L 29/1083 (2013.01); H01L 29/32 (2013.01);
Abstract
A manufacturing method of an epitaxial silicon wafer including a silicon wafer doped with boron and having a resistivity of 100 mΩ·cm or less and an epitaxial film formed on the silicon wafer includes: growing the epitaxial film on the silicon wafer; and applying a heat treatment on the epitaxial silicon wafer at a temperature of less than 900 degrees C.