The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2017

Filed:

Jul. 02, 2013
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;

Inventors:

Changjiang Yan, Beijing, CN;

Tiansheng Li, Beijing, CN;

Shaoying Xu, Beijing, CN;

Zhenyu Xie, Beijing, CN;

Xu Chen, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02554 (2013.01); H01L 21/02472 (2013.01); H01L 21/02483 (2013.01); H01L 21/02565 (2013.01); H01L 21/02617 (2013.01); H01L 27/1225 (2013.01); H01L 29/66969 (2013.01); H01L 29/78693 (2013.01);
Abstract

An Oxide TFT, a preparation method thereof, an array substrate and a display device are described. The method includes forming a gate electrode, a gate insulating layer, a channel layer, a barrier layer, as well as a source electrode and a drain electrode on a substrate; the channel layer is formed by depositing an amorphous oxide semiconductor film in a first mixed gas containing H, Ar and O. By depositing a channel layer in a first mixed gas containing H, Ar and O, the hysteresis phenomenon of the TFT can be mitigated effectively to improve the display quality of the display panel.


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