The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2017

Filed:

Oct. 13, 2015
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Junji Aotani, Tokyo, JP;

Shigeaki Tanaka, Tokyo, JP;

Katsuyuki Kurachi, Tokyo, JP;

Tatsuo Namikawa, Tokyo, JP;

Yuuki Aburakawa, Tokyo, JP;

Assignee:

TDK CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/12 (2006.01); H01G 4/005 (2006.01); H01G 4/33 (2006.01); H01G 4/255 (2006.01);
U.S. Cl.
CPC ...
H01G 4/12 (2013.01); H01G 4/005 (2013.01); H01G 4/255 (2013.01); H01G 4/33 (2013.01);
Abstract

A thin film capacitor includes a lower electrode layer, an upper electrode layer, and a dielectric substance layer provided between the lower electrode layer and the upper electrode layer. A dielectric patch member formed of a dielectric material is formed on a surface of the dielectric substance layer on an upper electrode layer side, a cross-sectional structure of the dielectric patch member has a taper angle of 1 to 25 degrees in a cross section perpendicular to the dielectric substance layer, the taper angle being an angle formed by (1) a tangential line tangent to an end portion of the dielectric patch member at a position that is 50% of a maximum height of the dielectric patch member and (2) a line being an interface between the dielectric substance layer and the upper electrode layer, and an area of the dielectric patch member is 100 to 900000 μm.


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