The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2017

Filed:

Sep. 13, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Wook-Ghee Hahn, Hwaseong-si, KR;

Chang-Yeon Yu, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); G11C 16/24 (2006.01); G11C 8/08 (2006.01); G11C 8/10 (2006.01); G11C 8/12 (2006.01); G11C 16/04 (2006.01); G11C 16/20 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 8/08 (2013.01); G11C 8/10 (2013.01); G11C 8/12 (2013.01); G11C 16/24 (2013.01); G11C 16/0483 (2013.01); G11C 16/20 (2013.01);
Abstract

A row decoder of the semiconductor memory device includes a decoding and precharging unit that is connected between a high voltage node and a block word line, wherein the decoding and precharging unit precharges the block word line, and wherein the decoding and precharging unit includes one or more decoding transistors that decode an address and form a transmission path for transmitting a block selection voltage. The row decoder further includes a pass transistor block that transmits one or more row driving voltages to row lines in response to the block selection voltage, wherein the block selection voltage is boosted according to a switching operation of the pass transistor block.


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