The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
May. 02, 2016
Applicant:
Futurewei Technologies, Inc., Plano, TX (US);
Inventors:
Jianmin Gong, San Jose, CA (US);
Xuejin Yan, Santa Clara, CA (US);
Dekun Liu, Wuhan, CN;
Liqiang Yu, Shenzhen, CN;
Shengping Li, Wuhan, CN;
Jing Hu, Shenzhen, CN;
Assignee:
Futurewei Technologies, Inc., Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 10/00 (2013.01); G02F 1/015 (2006.01); H04J 14/02 (2006.01); H04J 14/00 (2006.01);
U.S. Cl.
CPC ...
G02F 1/015 (2013.01); H04J 14/0215 (2013.01); G02F 2001/0151 (2013.01); G02F 2201/346 (2013.01); G02F 2203/055 (2013.01);
Abstract
An optical filter comprising a first distributed Bragg reflector (DBR) layer, a second DBR layer, and an intrinsic semiconductor layer positioned between the first DBR layer and the second DBR layer, with the intrinsic semiconductor layer providing a passband wavelength for the optical filter based on a carrier density of the intrinsic semiconductor layer.