The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
Jan. 21, 2016
Huawei Technologies Canada Co., Ltd., Kanata, CA;
The Governing Council of the University of Toronto, Toronto, CA;
Wesley David Sacher, Mississauga, CA;
Joyce Kai See Poon, Toronto, CA;
The Governing Council of the University of Toronto, Toronto, CA;
Abstract
A silicon photonic platform includes a substrate supporting a buried oxide layer, an active silicon layer deposited on the buried oxide layer, a first silicon nitride layer separated from the active silicon layer by a first spacer, the first silicon nitride layer and the active silicon layer constituting a first light-transferring interlayer transition and a second silicon nitride layer covered by a cladding and separated from the first silicon layer by a second spacer, the second silicon nitride layer and the first silicon nitride layer constituting a second light-transferring interlayer transition. The second silicon nitride layer passes over one or more waveguides in the active silicon layer to thereby define a waveguide crossing. The silicon nitride layers may be substituted with an equivalent dielectric with a similar refractive index and high optical transparency in the desired operating wavelength range.