The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Mar. 14, 2014
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Chiyoda-ku, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02J 7/00 (2006.01); H02J 7/14 (2006.01); H02M 7/06 (2006.01); B60L 11/18 (2006.01); H02M 3/335 (2006.01); H02J 7/02 (2016.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02J 7/14 (2013.01); B60L 11/1805 (2013.01); B60L 11/1812 (2013.01); B60L 11/1816 (2013.01); H02J 7/0077 (2013.01); H02M 7/066 (2013.01); B60L 2210/10 (2013.01); B60L 2210/30 (2013.01); H02J 7/022 (2013.01); H02M 3/3353 (2013.01); H02M 3/33553 (2013.01); H02M 2001/0051 (2013.01); Y02T 10/7005 (2013.01); Y02T 10/7072 (2013.01); Y02T 10/7216 (2013.01); Y02T 10/7241 (2013.01); Y02T 10/92 (2013.01); Y02T 90/127 (2013.01); Y02T 90/14 (2013.01);
Abstract
A Si diode is used as a rectifying diode on a transformer secondary side of an isolated DC/DC converter, and a high-voltage Schottky barrier diode made of a wide bandgap semiconductor is used as a free-wheeling diode arranged between a rectifier circuit and a smoothing reactor. Thus, there may be provided an in-vehicle charger capable of suppressing a diode recovery surge voltage with a circuit configuration that is simpler and suppressed in cost increase as compared to a case where a related-art synchronous rectifier circuit system is employed.