The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2017

Filed:

Apr. 09, 2014
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventor:

Dae Hee Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 27/15 (2006.01); H01L 33/60 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/20 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 27/15 (2013.01); H01L 33/387 (2013.01); H01L 33/60 (2013.01); H01L 33/20 (2013.01); H01L 33/22 (2013.01); H01L 33/382 (2013.01); H01L 33/405 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01);
Abstract

A light emitting device improves light extraction efficiency and may be individually driven in a light emitting device package and/or a light unit. The light emitting device may include first and second light emitting structures. The light emitting structure may include a first conductive first semiconductor layer, a first active layer under the first conductive first semiconductor layer, and a second conductive second semiconductor under the first active layer. The second light emitting structure may include a first conductive third semiconductor layer, a second active layer under the first conductive third semiconductor layer, and a second conductive fourth semiconductor layer under the second active layer.


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