The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2017

Filed:

Jul. 31, 2012
Applicants:

Masamichi Ishihara, Kitakyushu, JP;

Kenshu Oyama, Ogori, JP;

Shoji Murakami, Nakatado-gun, JP;

Hitonobu Onosaka, Nakatado-gun, JP;

Inventors:

Masamichi Ishihara, Kitakyushu, JP;

Kenshu Oyama, Ogori, JP;

Shoji Murakami, Nakatado-gun, JP;

Hitonobu Onosaka, Nakatado-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/60 (2010.01); H01L 25/075 (2006.01); H01L 23/00 (2006.01); H05K 1/05 (2006.01); H01L 33/62 (2010.01);
U.S. Cl.
CPC ...
H01L 33/60 (2013.01); H01L 24/97 (2013.01); H01L 25/0753 (2013.01); H05K 1/056 (2013.01); H01L 33/62 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48228 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/97 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/07802 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/15747 (2013.01); H01L 2924/15787 (2013.01); H01L 2924/181 (2013.01); H05K 2201/0209 (2013.01); H05K 2201/10106 (2013.01); H05K 2201/2054 (2013.01);
Abstract

A semiconductor device includes an electrical insulating layer with superior heat resistance, heat dissipation, and durability, and which is manufactured through a process with good cost performance and process performance. In a semiconductor device including a first substrate to which a semiconductor chip is mounted directly or indirectly, and a white insulating layer formed on a surface of the first substrate and functioning as a reflecting material, the semiconductor chip is an LED, at least the surface of the first substrate is made of a metal, and a stacked structure of the white insulating layer and a metal layer is formed by coating a liquid material, which contains SiOin the form of nanoparticles and a white inorganic pigment, over the surface of the first substrate and baking the coated liquid material.


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