The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Mar. 17, 2015
Stmicroelectronics SA, Montrouge, FR;
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Laurent Frey, Grenoble, FR;
Michel Marty, Saint Paul de Varces, FR;
STMicroelectronics SA, Montrouge, FR;
Commissariat A L'Energie Atomique et aux Energies Alternatives, Paris, FR;
Abstract
A photodiode has an active portion formed in a silicon substrate and covered with a stack of insulating layers successively including at least one first silicon oxide layer, an antireflection layer, and a second silicon oxide layer. The quantum efficiency of the photodiode is optimized by: determining, for the infrared wavelength, first thicknesses of the second layer corresponding to maximum absorptions of the photodiode, and selecting, from among the first thicknesses, a desired thickness, eox, so that a maximum manufacturing dispersion is smaller than a half of a pseudo-period separating two successive maximum absorption values.