The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Apr. 03, 2015
Soko Kagaku Co., Ltd., Ishikawa, JP;
Akira Hirano, Aichi, JP;
Masamichi Ippommatsu, Aichi, JP;
Soko Kagaku Co., Ltd., Ishikawa, JP;
Abstract
There is provided a nitride semiconductor ultraviolet light-emitting element capable of efficiently releasing a waste heat generated in an ultraviolet light emitting operation. The nitride semiconductor ultraviolet light-emitting element includes a semiconductor laminated portionhaving an n-type AlGaN layer, an active layerof an AlGaN layer, and p-type AlGaN layersand; an n electrode; a p electrode; a protective insulating film, and a first plated electrodeformed by a wet plating method and composed of copper or alloy containing copper as a main component. The semiconductor laminated portionis formed in a first region R, and the p electrode is formed on the portion. An upper surface of the n-type AlGaN-based semiconductor layeris exposed in a second region, and the n electrodeis formed on the upper surface. The protective insulating filmhas openings for exposing at least one part of the n electrodeand at least one part of the p electrode. The first plated electrodeis spaced apart from the exposed surface of the n electrodeand covers a whole upper surface and a whole outer side surface of the first region R, and a part of the second region Rwhich is in contact with the first region R