The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Sep. 21, 2015
Applicant:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Inventors:
Ki Yon Park, Ansan-si, KR;
Hwa Mok Kim, Ansan-si, KR;
Young Hwan Son, Ansan-si, KR;
Daewoong Suh, Ansan-si, KR;
Assignee:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/102 (2006.01); H01L 27/146 (2006.01); H01L 31/108 (2006.01); H01L 31/0304 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/101 (2006.01);
U.S. Cl.
CPC ...
H01L 31/108 (2013.01); H01L 31/0224 (2013.01); H01L 31/022408 (2013.01); H01L 31/03048 (2013.01); H01L 31/1013 (2013.01); H01L 31/1848 (2013.01); Y02E 10/544 (2013.01);
Abstract
A light detection device includes a substrate, a buffer layer disposed on the substrate, a first band gap change layer disposed on a portion of the buffer layer, a light absorption layer disposed on the first band gap change layer, a Schottky layer disposed on a portion of the light absorption layer, and a first electrode layer disposed on a portion of the Schottky layer.