The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Feb. 25, 2014
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Hidehito Kitakado, Osaka, JP;
Sharp Kabushiki Kaisha, Sakai, JP;
Abstract
A semiconductor device () includes an oxide semiconductor layer () and a conductor layer () supported on a substrate (). The oxide semiconductor layer () contains a first metallic element. The conductor layer () has a multilayer structure including a first metal oxide layer (m) containing the first metallic element, a second metal oxide layer (m) on the first metal oxide layer, the second metal oxide layer (m) containing an oxide of a second metallic element, and a metal layer (M) on the second metal oxide layer, the metal layer (M) containing the second metallic element. The first metal oxide layer (m) and the oxide semiconductor layer () are made of the same oxide film. When viewed from the normal direction of the substrate, the first metal oxide layer (m) and the oxide semiconductor layer () do not overlap.