The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Jul. 03, 2016
Applicant:
Tower Semiconductor Ltd., Midgal Haemek, IL;
Inventors:
Assignee:
TOWER SEMICONDUCTORS LTD., Migdal Haemeq, IL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/26566 (2013.01); H01L 29/0882 (2013.01); H01L 29/1095 (2013.01); H01L 29/66681 (2013.01);
Abstract
A laterally diffused metal oxide semiconductor (LDMOS) device that may include an oxide region that comprises a bottom surface; a drain that is positioned between a left drift region and a right drift region and below the bottom surface; wherein the oxide region further comprises a first sloped surface and a second sloped surface; wherein a first angle between the first sloped surface and the bottom surface does not exceed twenty degrees; and wherein a second angle between the second sloped surface and the bottom surface of the oxide region does not exceed twenty degrees.