Finfet semiconductor devices and method of forming the same

Abstract

Provided are a semiconductor device and a method of fabricating the same. The method comprises forming an active fin extending along a first direction; forming a field insulating layer exposing an upper part of the active fin, along long sides of the active fin; forming a dummy gate pattern extending along a second direction intersecting the first direction, on the active fin; forming a spacer on at least one side of the dummy gate pattern; forming a liner layer covering the active fin exposed by the spacer and the dummy gate pattern; forming a dopant supply layer containing a dopant element, on the liner layer; and forming a doped region in the active fin along an upper surface of the active fin by heat-treating the dopant supply layer.