The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2017

Filed:

May. 18, 2017
Applicants:

Lg Electronics Inc., Seoul, KR;

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Jun Ho Jang, Anyang-si, KR;

Geun Ho Kim, Seoul, KR;

Assignees:

LG ELECTRONICS INC., Seoul, KR;

LG INNOTEK CO., LTD., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 33/20 (2010.01); H01L 29/167 (2006.01); H01L 25/16 (2006.01); H01L 33/62 (2010.01); H01L 33/00 (2010.01); H01L 33/58 (2010.01); H01L 29/866 (2006.01); H01L 33/32 (2010.01); H01L 33/48 (2010.01); H01L 33/40 (2010.01); H01L 33/60 (2010.01); H01L 33/44 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 29/167 (2013.01); H01L 25/167 (2013.01); H01L 29/866 (2013.01); H01L 33/0079 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 33/486 (2013.01); H01L 33/58 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 33/0095 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/10253 (2013.01); H01L 2933/0033 (2013.01);
Abstract

A light emitting device package can include a sub-mount having a first surface, a second surface, a bottom surface and a cavity; a first layer on the first surface; a second layer on the second surface; a third layer on the bottom surface; a light emitting device on the first layer and including a supporting layer including an anti-diffusion layer, a first electrode on the supporting layer, a semiconductor light emitting structure electrically connected to the first electrode, and a second electrode electrically connected to the semiconductor light emitting structure, in which the first and second electrodes electrically connect to the first layer and the second layer, respectively, and the semiconductor light emitting structure includes a light extraction structure; an ESD property improving diode on the second surface, electrically connected to the second layer and arranged a distance apart from the light emitting device, and a lens on the sub-mount.


Find Patent Forward Citations

Loading…