The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Mar. 20, 2017
Applicants:
Yong Zhang, Charlotte, NC (US);
Raphael Tsu, Huntersville, NC (US);
Naili Yue, Oakland, CA (US);
Inventors:
Assignee:
THE UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE, Charlotte, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/16 (2013.01); H01L 21/0259 (2013.01); H01L 21/0262 (2013.01); H01L 21/02444 (2013.01); H01L 21/02631 (2013.01); H01L 21/02658 (2013.01); H01L 29/165 (2013.01); H01L 29/1606 (2013.01);
Abstract
Graphene is used as an interfacial layer to grow Si and other semiconductors or crystalline materials including two-dimensional Si and other structures on any foreign substrate that can withstand the growth temperature without the limitation matching condition typically required for epitaxial growth.