The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9812504 B1

Date of Patent:

Nov. 07, 2017

Filed:

Sep. 19, 2016

Electronic device

Applicant:

SK Hynix Inc., Icheon-Si, KR;

Inventor:

Tae-Young Lee, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-Si, KR;

Attorney:

Perkins Coie LLP

Primary Examiner:

Joseph Schoenholtz

Int. Cl.

CPC ...

H01L 27/24 (2006.01); H01L 45/00 (2006.01); G06F 3/06 (2006.01); G11C 13/00 (2006.01); G11C 11/16 (2006.01); G11C 11/56 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01);

U.S. Cl.

CPC ...

H01L 27/2463 (2013.01); G06F 3/061 (2013.01); G06F 3/068 (2013.01); G06F 3/0625 (2013.01); G06F 3/0659 (2013.01); G06F 3/0676 (2013.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/56 (2013.01); G11C 11/5607 (2013.01); G11C 11/5685 (2013.01); G11C 13/0002 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); H01L 27/224 (2013.01); H01L 43/08 (2013.01); H01L 45/08 (2013.01); H01L 45/085 (2013.01); H01L 45/1253 (2013.01); H01L 45/145 (2013.01); H01L 45/146 (2013.01); G11C 2213/15 (2013.01);

Abstract

This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes a semiconductor memory, and the semiconductor memory includes a variable resistance structure including a material having a resistance that is changed by formation or dissipation of conductive filaments; and a Magnetic Tunnel Junction (MTJ) structure inserted in the variable resistance structure and comprising a first magnetic layer having a pinned magnetization direction, a second magnetic layer having a variable magnetization direction, and a tunnel dielectric layer interposed between the first magnetic layer and the second magnetic layer.

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