The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2017

Filed:

Apr. 19, 2016
Applicant:

Regents of the University of Minnesota, Minneapolis, MN (US);

Inventors:

Ramesh Harjani, Minneapolis, MN (US);

Rakesh Kumar Palani, Tustin, CA (US);

Saurabh Chaubey, Minneapolis, MN (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 27/146 (2006.01); H01L 27/12 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10805 (2013.01); H01L 28/40 (2013.01); H01L 27/0805 (2013.01); H01L 27/1255 (2013.01); H01L 27/14689 (2013.01);
Abstract

Capacitors that can be formed fully on an integrated circuit (IC) chip are described in this disclosure. An IC chip includes a metal-oxide-silicone (MOS) capacitor formed from a MOS transistor having a drain terminal, a source terminal, a gate terminal, and a body terminal. The drain terminal and the source terminal are not electrically connected to any other node, and the gate terminal and the body terminal form respective first and second terminals of the MOS capacitor. The IC chip also includes an electrical conductor coupled to one of the gate terminal or the body terminal of the MOS transistor and configured to deliver a voltage to operate the MOS capacitor in an accumulation mode.


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