The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Feb. 02, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Ramana Malladi, Essex Junction, VT (US);
Renata Camillo-Castillo, Essex Junction, VT (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 27/082 (2006.01); H01L 21/8228 (2006.01); H01L 29/66 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 23/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0826 (2013.01); H01L 21/82285 (2013.01); H01L 23/66 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/66242 (2013.01); H01L 29/7378 (2013.01);
Abstract
Device structures and fabrication methods for a device structure. One or more trench isolation regions are formed in a substrate to surround a device region. A base layer is formed on the device region. First and second emitter fingers are formed on the base layer. A portion of the device region extending from the first emitter finger to the second emitter finger is free of dielectric material.