The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Aug. 13, 2015
Applicant:
Ngk Insulators, Ltd., Aichi, JP;
Inventors:
Akiyoshi Ide, Kasugai, JP;
Tatsuro Takagaki, Nagoya, JP;
Sugio Miyazawa, Kasugai, JP;
Yuji Hori, Owariasahi, JP;
Tomoyoshi Tai, Inazawa, JP;
Ryosuke Hattori, Ichinomiya, JP;
Assignee:
NGK INSULATORS, LTD., Aichi, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); B32B 38/10 (2006.01); B32B 9/00 (2006.01); B32B 9/04 (2006.01); B32B 7/02 (2006.01); H03H 9/25 (2006.01); H03H 3/10 (2006.01); B32B 7/06 (2006.01); B32B 18/00 (2006.01); H01L 21/78 (2006.01); B32B 7/12 (2006.01); B32B 27/08 (2006.01); B32B 27/20 (2006.01); B32B 27/28 (2006.01); H01L 41/187 (2006.01); H03H 9/02 (2006.01); B32B 37/10 (2006.01); H03H 3/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); B32B 7/02 (2013.01); B32B 7/06 (2013.01); B32B 7/12 (2013.01); B32B 9/005 (2013.01); B32B 9/04 (2013.01); B32B 18/00 (2013.01); B32B 27/08 (2013.01); B32B 27/20 (2013.01); B32B 27/283 (2013.01); B32B 38/10 (2013.01); H01L 21/78 (2013.01); H03H 3/10 (2013.01); H03H 9/25 (2013.01); B32B 37/10 (2013.01); B32B 2264/105 (2013.01); B32B 2307/20 (2013.01); B32B 2307/206 (2013.01); B32B 2307/538 (2013.01); B32B 2309/02 (2013.01); B32B 2309/105 (2013.01); B32B 2457/00 (2013.01); B32B 2457/14 (2013.01); H01L 41/1873 (2013.01); H03H 3/08 (2013.01); H03H 9/02574 (2013.01); Y10T 428/12597 (2015.01);
Abstract
A composite substrateincludes a semiconductor substrateand an insulating support substratethat are laminated together. The support substrateincludes first and second substratesandmade of the same material and bonded together with a strength that allows the first and second substratesandto be separated from each other with a blade. The semiconductor substrateis laminated on a surface of the first substrateopposite a surface thereof bonded to the second substrate