The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Apr. 17, 2015
Tsinghua University, Beijing, CN;
Graduate School AT Shenzhen, Tsinghua University, Shenzhen, Guangdong, CN;
TSINGHUA UNIVERSITY, Beijing, CN;
GRADUATE SCHOOL AT SHENZHEN, TSINGHUA UNIVERSITY, Shenzhen, Guangdong, CN;
Abstract
The present disclosure provides a cell structure, a random access memory and operation methods. The cell structure with four transistors, including a first N-type transistor, a first P-type transistor, a second N-type transistor and a second P-type transistor, in which an absolute value of a threshold voltage of the first N-type transistor is greater than an absolute value of a threshold voltage of the second N-type transistor, and an absolute value of a threshold voltage of the first P-type transistor is greater than an absolute value of a threshold voltage of the second P-type transistor. The random access memory, including: two identical memory cell arrays including the cell structure with four transistors, a data write circuit and a data read circuit, by using Two Modular Redundancy harden method, and thus reading correctly and avoiding the mistake reversal caused by the single event upset effect.