The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Aug. 31, 2016
New York University, New York, NY (US);
NEW YORK UNIVERSITY, New York, NY (US);
Abstract
A high speed, low power method to control and switch the magnetization direction of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The magnetic device comprises a pinned magnetic layer, a reference magnetic layer with a fixed magnetization direction and a free magnetic layer with a changeable magnetization direction. The magnetic layers are separated by insulating non-magnetic layers. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, can be measured to read out the information stored in the device.