The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2017

Filed:

Nov. 23, 2015
Applicant:

Western Digital (Fremont), Llc, Fremont, CA (US);

Inventors:

Anup Ghosh Roy, Fremont, CA (US);

Guanxiong Li, Fremont, CA (US);

Daniele Mauri, San Jose, CA (US);

Ming Mao, Dublin, CA (US);

Goncalo Albuquerque, San Jose, CA (US);

Savas Gider, San Jose, CA (US);

Assignee:

WESTERN DIGITAL (FREMONT), LLC, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/39 (2006.01); G11B 5/127 (2006.01); G11B 5/33 (2006.01);
U.S. Cl.
CPC ...
G11B 5/1272 (2013.01); G11B 5/33 (2013.01); G11B 5/3906 (2013.01); G11B 5/3909 (2013.01); G11B 5/3912 (2013.01); G11B 5/3932 (2013.01); G11B 2005/3996 (2013.01);
Abstract

A method provides a magnetic read apparatus. A sensor stack is deposited. The read sensor is defined from the stack such that the sensor has sides forming a junction angle of 75 degrees-105 degrees from a sensor bottom. Defining the sensor includes performing a first ion mill at a first angle and a first energy and performing a second ion mill at a second angle greater than the first angle and at a second energy less than the first energy. The first angle is 5 degrees-30 degrees from normal to the top surface. After the first ion mill, less than half of the stack's bottom layer depth remains unmilled. Magnetic bias structure(s) adjacent to the sides may be formed. The magnetic bias structure(s) include a side shielding material having at least one of the saturation magnetization greater than 800 emu/cmand an exchange length less than five nanometers.


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