The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2017

Filed:

Oct. 14, 2011
Applicants:

Dirk Taillaert, Bredene, BE;

Diederik Vermeulen, Sint-Pauwels, BE;

Jonathan Schrauwen, Gentbrugge, BE;

Gunther Roelkens, Melle, BE;

Inventors:

Dirk Taillaert, Bredene, BE;

Diederik Vermeulen, Sint-Pauwels, BE;

Jonathan Schrauwen, Gentbrugge, BE;

Gunther Roelkens, Melle, BE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/12 (2006.01); G02B 6/30 (2006.01); G02B 6/122 (2006.01);
U.S. Cl.
CPC ...
G02B 6/305 (2013.01); G02B 6/1228 (2013.01); G02B 6/12 (2013.01); G02B 6/122 (2013.01); G02B 6/30 (2013.01);
Abstract

Disclosed are optical devices for coupling radiation between an optical waveguide and an external medium. In one embodiment, an optical device is disclosed comprising a semiconductor die comprising an integrated optical waveguide core and an overlying optical waveguide comprising a waveguide taper and a waveguide facet. The overlying optical waveguide at least partially overlies the integrated optical waveguide core, and the waveguide facet is between about 1 μm and 200 μm from an edge of the semiconductor die. In another embodiment, a method is disclosed comprising providing a substrate comprising an integrated semiconductor waveguide and forming on the substrate an overlying waveguide comprising a waveguide taper and a waveguide facet. The overlying waveguide at least partially overlies the integrated semiconductor waveguide. The method further includes cutting the substrate about 1 μm and 200 μm from the waveguide facet.


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