The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2017

Filed:

Jan. 15, 2016
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Kunihiro Ueda, Tokyo, JP;

Yoshiyuki Mizoguchi, Tokyo, JP;

Hiroshi Yamazaki, Tokyo, JP;

Suguru Watanabe, Tokyo, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 7/14 (2006.01); G01R 33/09 (2006.01); G01R 33/00 (2006.01); H01L 21/00 (2006.01); G01R 1/00 (2006.01);
U.S. Cl.
CPC ...
G01R 33/09 (2013.01); G01R 33/0052 (2013.01); G01R 33/093 (2013.01); G01R 1/00 (2013.01); H01L 21/00 (2013.01); H01L 2221/00 (2013.01);
Abstract

A magnetic sensor is provided with first and second magnetoresistive effect elements that can detect an external magnetic field. The first and second magnetoresistive effect elements include at least magnetization direction change layers where a direction of magnetization is changed according to an external magnetic field. The width Wof a magnetization direction change layer in an initial magnetization direction of the magnetization direction change layer of the first magnetoresistive effect element, and the width Wof a magnetization direction change layer in an initial magnetization direction of the magnetization direction change layer of the second magnetoresistive effect element have a relationship shown by formula (1) below. Sensitivity of the first magnetoresistive effect element to the external magnetic field is higher than that of the second magnetoresistive effect element.  (1)


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