The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 2017

Filed:

Feb. 27, 2017
Applicant:

The United States of America, As Represented BY the Secretary of Commerce, Washington, DC (US);

Inventor:

Babak Nikoobakht, IV, Potomac, MD (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B82B 3/00 (2006.01); B82B 1/00 (2006.01); H01L 21/306 (2006.01); H01L 21/324 (2006.01); H01L 21/02 (2006.01); B01L 3/00 (2006.01);
U.S. Cl.
CPC ...
B82B 3/0019 (2013.01); B01L 3/502707 (2013.01); B82B 1/001 (2013.01); H01L 21/02241 (2013.01); H01L 21/30612 (2013.01); H01L 21/3245 (2013.01); B01L 2200/12 (2013.01); B01L 2300/0896 (2013.01);
Abstract

A process for making a nanoduct includes: disposing an etchant catalyst on a semiconductor substrate including a single crystal structure; heating the semiconductor substrate to an etching temperature; introducing an oxidant; contacting the semiconductor substrate with the oxidant in a presence of the etchant catalyst; anisotropically etching the semiconductor substrate by the etchant catalyst in a presence of the oxidant in an etch direction that is coincident along a crystallographic axis of the semiconductor substrate; and forming the nanoduct as the etchant catalyst propagates along a surface of the semiconductor substrate during anisotropically etching the semiconductor substrate, the nanoduct being crystallographically aligned with the crystallographic axis of the semiconductor substrate.


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