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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9808782 B1

PDFFull Text
Expired
Date of Patent:
Nov. 07, 2017

Filed:

Sep. 28, 2016

Optoelectronic devices including twisted bilayers

Applicant:

Massachusetts Institute of Technology, Cambridge, MA (US);

Inventors:

Ju Li, Weston, MA (US);

Xiaofeng Qian, Winchester, MA (US);

Menghao Wu, Hubei, CN;

Assignee:

Massachusetts Institute of Technology, Cambridge, MA (US);

Attorney:

Wolf, Greenfield & Sacks, P.C.

Primary Examiner:

Stephen W Smoot

Int. Cl.
CPC ...
H01L 31/109 (2006.01); H01L 33/04 (2010.01); B01J 19/12 (2006.01); H01L 21/02 (2006.01); H01L 31/072 (2012.01); H01L 33/00 (2010.01); H01L 31/0264 (2006.01); H01L 31/0352 (2006.01); H01L 31/036 (2006.01); H01L 31/18 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
B01J 19/127 (2013.01); H01L 21/02568 (2013.01); H01L 21/02609 (2013.01); H01L 31/0264 (2013.01); H01L 31/036 (2013.01); H01L 31/035236 (2013.01); H01L 31/072 (2013.01); H01L 31/109 (2013.01); H01L 31/186 (2013.01); H01L 33/002 (2013.01); H01L 33/04 (2013.01); H01L 29/045 (2013.01); H01L 2933/0033 (2013.01); Y02E 10/50 (2013.01);
Abstract

An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, an optoelectronic device includes first and second semiconducting atomically thin layers with corresponding first and second lattice directions. The first and second semiconducting atomically thin layers are located proximate to each other, and an angular difference between the first lattice direction and the second lattice direction is between about 0.000001° and 0.5°, or about 0.000001° and 0.5° deviant from of a Vicnal angle of the first and second semiconducting atomically thin layers. Alternatively, or in addition to the above, the first and second semiconducting atomically thin layers may form a Moiré superlattice of exciton funnels with a period between about 50 nm to 3 cm. The optoelectronic device may also include charge carrier conductors in electrical communication with the semiconducting atomically thin layers to either inject or extract charge carriers.

Find Patent Forward Citations

Li, Ju. (2017). Optoelectronic devices including twisted bilayers (U.S. Patent No. 9808782). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9808782

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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