The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2017

Filed:

Mar. 23, 2016
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Luca Valli, Villach, IT;

Benno Muehlbacher, St. Magdalen, AT;

Richard Gaggl, Poertschach am, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01); H03G 1/00 (2006.01);
U.S. Cl.
CPC ...
H03G 1/0088 (2013.01); H03F 3/45179 (2013.01); H03F 2203/45222 (2013.01);
Abstract

A signal amplification method includes receiving, from a capacitive sensor, a first input signal by a first control terminal of a first transistor, and a second input signal by a first control terminal of a second transistor. The method also includes producing a first output signal, including amplifying a first signal at a first load path terminal of the first transistor using a first inverting amplifier having an output coupled to a resistance network, and producing a second output signal, including amplifying a second signal at a first load path terminal of the second transistor using a second inverting amplifier having an output coupled to the resistance network. The method also includes feeding back the first and second output signal to a second load path terminal of the first transistor and to a second load path terminal of the second transistor via the resistance network according to a pre-determined fraction.


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