The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 31, 2017

Filed:

Sep. 10, 2015
Applicant:

Skyworks Solutions, Inc., Woburn, MA (US);

Inventors:

Oleksandr Gorbachov, Irvine, CA (US);

Qiang Li, Irvine, CA (US);

Floyd Ashbaugh, Irvine, CA (US);

Aydin Seyedi, Irvine, CA (US);

Lothar Musiol, Irvine, CA (US);

Lisette L. Zhang, Irvine, CA (US);

Assignee:

Skyworks Solutions, Inc., Woburn, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H03F 3/193 (2006.01); H03F 1/30 (2006.01); H03F 1/02 (2006.01); H03F 1/32 (2006.01);
U.S. Cl.
CPC ...
H03F 3/193 (2013.01); H03F 1/0261 (2013.01); H03F 1/301 (2013.01); H03F 1/3205 (2013.01); H03F 2200/18 (2013.01); H03F 2200/451 (2013.01);
Abstract

An RF power amplifier biasing circuit has a start ramp signal input, a main current source input, an auxiliary current source input, and a circuit output. A ramp-up capacitor is connected to the auxiliary current source input. A ramp-up switch transistor is connected to the start ramp signal input and is selectively thereby to connect the auxiliary current source input to the ramp-up capacitor. A buffer stage has an input connected to the ramp-up capacitor and an output connected to the main current source input at a sum node. A mirror transistor has a gate terminal corresponding to the circuit output and a source terminal connected to the sum node and to the gate terminal.


Find Patent Forward Citations

Gorbachov, Oleksandr. (2017). High-linearity cmos wifi rf power amplifiers in wide range of burst signals (U.S. Patent No. 9806679). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9806679

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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