The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2017
Filed:
Aug. 17, 2016
Applicant:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi Aichi-ken, JP;
Inventor:
Toshikazu Sugiura, Okazaki, JP;
Assignee:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02P 1/00 (2006.01); H02P 27/00 (2006.01); H02M 7/537 (2006.01); H02M 7/46 (2006.01); H01L 25/07 (2006.01); H01L 23/492 (2006.01); H02P 27/06 (2006.01); H02M 3/155 (2006.01);
U.S. Cl.
CPC ...
H02M 7/537 (2013.01); H01L 23/492 (2013.01); H01L 25/072 (2013.01); H02M 7/46 (2013.01); H01L 2224/33 (2013.01); H02M 3/155 (2013.01); H02P 27/06 (2013.01); Y02B 70/1483 (2013.01);
Abstract
A SiC Schottky-barrier diode and a SiPiN diode are connected in parallel. Due to a difference in their thermal properties, a relatively large current flows in the SiPiN diode at a high temperature in which electro migration progresses easily in a solder layer, and the progression of the electro migration is suppressed. At a low temperature in which the electro migration does not progress so much, only a relatively small current flows in the SiPiN diode, and a loss suppression by the SiC Schottky-barrier diode is achieved.